FQD11P06TM Datasheet PDF - Fairchild

●General Description

●These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.

●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

●Features

●-9.4A, -60V, RDS(on)= 0.185Ω@VGS= -10 V

●Low gate charge ( typical 13 nC)

●Low Crss ( typical 45 pF)

●Fast switching

●100% avalanche tested

●Improved dv/dt capability