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Part Datasheet Search > MOSFETs > ON Semiconductor > FQD16N25CTM Datasheet PDF
FQD16N25CTM
$ 0.413
FQD16N25CTM Datasheet PDF (8 Pages)
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FQD16N25CTM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
220 mΩ
Power Dissipation
160 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
250 V
Rise Time
130 ns
Input Capacitance (Ciss)
830pF @25V(Vds)
Input Power (Max)
160 W
Fall Time
105 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
160 W

FQD16N25CTM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.1 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃

FQD16N25CTM Documents

ON Semiconductor
8 Pages / 0.48 MByte
ON Semiconductor
10 Pages / 0.59 MByte
ON Semiconductor
7 Pages / 0.87 MByte

FQD16N25 Documents

Fairchild
Power Field-Effect Transistor, 16A I(D), 250V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
ON Semiconductor
Trans MOSFET N-CH 250V 16A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 250V 16A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 250V 16A 3Pin(2+Tab) DPAK
ON Semiconductor
MOSFET N-CH 250V 16A DPAK
Fairchild
250V N-Channel MOSFET
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