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FQD19N10LTM Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

TO-252-3

Description:

N-Channel QFET® MOSFET 100V, 15.6A, 100mΩ

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

FQD19N10LTM Datasheet (8 Pages)

Package Outline Dimension on7 Page

Part Numbering System on2 Page

FQD19N10LTM Datasheet PDF (8 Pages)

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FQD19N10LTM Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.074 Ω

Power Dissipation

2.5 W

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

100 V

Rise Time

410 ns

Input Capacitance (Ciss)

670pF @25V(Vds)

Input Power (Max)

2.5 W

Fall Time

140 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2.5 W

View Datasheet >

FQD19N10LTM Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

6.6 mm

Size-Width

6.1 mm

Size-Height

2.3 mm

View Datasheet >

FQD19N10LTM Environmental

FQD19N10LTM Function Overview

FQD19N10LTM Documents

FQD19N10LTM Datasheet

ON Semiconductor

8 Pages / 1.3 MByte

FQD19N10LTM Other Datasheet PDF

ON Semiconductor

10 Pages / 1.41 MByte

FQD19N10LTM Notice File

ON Semiconductor

7 Pages / 0.87 MByte

FQD19N10 Documents

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