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FQD19N10TF
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FQD19N10TF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Dissipation
2.5W (Ta), 50W (Tc)
Drain to Source Voltage (Vds)
100 V
Rise Time
150 ns
Input Capacitance (Ciss)
780pF @25V(Vds)
Fall Time
65 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)

FQD19N10TF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQD19N10TF Documents

ON Semiconductor
9 Pages / 0.57 MByte
ON Semiconductor
10 Pages / 1.29 MByte

FQD19N10 Documents

Fairchild
Trans MOSFET N-CH 100V 15.6A 3Pin(2+Tab) DPAK
ON Semiconductor
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK, 2500-REEL
Fairchild
Trans MOSFET N-CH 100V 15.6A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 100V 15.6A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
N-Channel QFET® MOSFET 100V, 15.6A, 100mΩ
ON Semiconductor
MOSFET N-CH 100V 15.6A DPAK
Fairchild
Trans MOSFET N-CH 100V 15.6A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 100V 15.6A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 100V 15.6A 3Pin(2+Tab) DPAK
Fairchild
Trans MOSFET N-CH 100V 15.6A 3Pin(2+Tab) DPAK T/R
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