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FQD1N60CTM Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

High Voltage MOS

Case Package:

TO-252-3

Description:

FAIRCHILD SEMICONDUCTOR FQD1N60CTM Power MOSFET, N Channel, 1A, 600V, 9.3Ω, 10V, 2V

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Documentation:

FQD1N60CTM Datasheet (2 Pages)

FQD1N60CTM Datasheet PDF (2 Pages)

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FQD1N60CTM Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

1.00 A

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

9.3 Ω

Polarity

N-Channel

Power Dissipation

28 W

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

1.00 A

Rise Time

21 ns

Input Capacitance (Ciss)

170pF @25V(Vds)

Input Power (Max)

2.5 W

Fall Time

27 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

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FQD1N60CTM Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

6.6 mm

Size-Width

6.1 mm

Size-Height

2.3 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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FQD1N60CTM Environmental

FQD1N60CTM Export Classifications

FQD1N60CTM Function Overview

FQD1N60CTM Documents

FQD1N60CTM Datasheet

Fairchild

2 Pages / 0.22 MByte

FQD1N60CTM Other Datasheet PDF

Fairchild

18 Pages / 0.94 MByte

FQD1N60CTM Notice File

Fairchild

7 Pages / 0.87 MByte

FQD1N60 Documents

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FQD1N60CTM Datasheet PDF

Fairchild

FAIRCHILD SEMICONDUCTOR FQD1N60CTM Power MOSFET, N Channel, 1A, 600V, 9.3Ω, 10V, 2V

FQD1N60CTM Datasheet PDF

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