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FQD3N60CTM-WS Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-252-3

Description:

Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) DPAK T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

FQD3N60CTM-WS Datasheet PDF

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FQD3N60CTM-WS Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

2.8 Ω

Power Dissipation

50 W

Threshold Voltage

4 V

Input Capacitance

435 pF

Drain to Source Voltage (Vds)

600 V

Rise Time

30 ns

Maximum Forward Voltage (Max)

1.4 V

Input Capacitance (Ciss)

435pF @25V(Vds)

Fall Time

35 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

50000 mW

FQD3N60CTM-WS Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tape & Reel (TR)

FQD3N60CTM-WS Environmental

FQD3N60CTM-WS Function Overview

FQD3N60CTM-WS Documents

FQD3N60CTM-WS Other Datasheet PDF

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8 Pages / 0.93 MByte

FQD3N60CTM-WS Notice File

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11 Pages / 0.67 MByte

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