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Part Datasheet Search > MOSFETs > Fairchild > FQD5N60CTM_F080 Datasheet PDF
FQD5N60CTM_F080
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FQD5N60CTM_F080 Datasheet PDF (10 Pages)
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FQD5N60CTM_F080 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Polarity
N-CH
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
2.8A
Rise Time
42 ns
Input Capacitance (Ciss)
670pF @25V(Vds)
Fall Time
46 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta), 49W (Tc)

FQD5N60CTM_F080 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQD5N60CTM_F080 Documents

Fairchild
10 Pages / 0.54 MByte
Fairchild
9 Pages / 0.55 MByte

FQD5N60 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR FQD5N60CTM Power MOSFET, N Channel, 2.8A, 600V, 2Ω, 10V, 4V
ON Semiconductor
N-Channel QFET® MOSFET 600V, 2.8A, 2.5Ω
Fairchild
Trans MOSFET N-CH 600V 2.8A 3Pin(2+Tab) DPAK
Fairchild
Trans MOSFET N-CH 600V 2.8A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 600V 2.8A 3Pin(2+Tab) DPAK T/R
Fairchild
MOSFET N-CH 600V 2.8A
ON Semiconductor
MOSFET 600V, NCH MOSFET
ON Semiconductor
MOSFET N-CH 600V 2.8A DPAK
ON Semiconductor
MOSFET N-CH 600V 2.8A DPAK
ON Semiconductor
Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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