FQPF12N60C Datasheet PDF - Fairchild

●Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high

●efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

●Features

●• 12A, 600V, RDS(on)= 0.65Ω@VGS= 10 V

●• Low gate charge ( typical 48 nC)

●• Low Crss ( typical 21pF)

●•Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability

●• RoHS compliant