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FQPF2N60C Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

High Voltage MOS

Case Package:

TO-220-3

Description:

FAIRCHILD SEMICONDUCTOR FQPF2N60C Power MOSFET, N Channel, 2A, 600V, 4.7Ω, 10V, 4V

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Documentation:

FQPF2N60C Datasheet (10 Pages)

Package Outline Dimension on8 Page 9 Page

Part Numbering System on2 Page

FQPF2N60C Datasheet PDF (10 Pages)

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FQPF2N60C Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

2.00 A

Case/Package

TO-220-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

4.7 Ω

Polarity

N-Channel

Power Dissipation

23 W

Threshold Voltage

4 V

Input Capacitance

235 pF

Gate Charge

12.0 nC

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

2.00 A

Rise Time

25 ns

Input Capacitance (Ciss)

235pF @25V(Vds)

Input Power (Max)

23 W

Fall Time

28 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

23 W

View Datasheet >

FQPF2N60C Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.16 mm

Size-Width

4.7 mm

Size-Height

9.19 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

FQPF2N60C Environmental

FQPF2N60C Export Classifications

FQPF2N60C Function Overview

FQPF2N60C Documents

FQPF2N60C Datasheet

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10 Pages / 1.39 MByte

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FQPF2N60C Datasheet PDF

Fairchild

FAIRCHILD SEMICONDUCTOR FQPF2N60C Power MOSFET, N Channel, 2A, 600V, 4.7Ω, 10V, 4V

FQPF2N60C Datasheet PDF

ON Semiconductor

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Freescale

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