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FQU1N60CTU Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

High Voltage MOS

Case Package:

TO-251-3

Description:

FAIRCHILD SEMICONDUCTOR FQU1N60CTU Power MOSFET, N Channel, 1A, 600V, 2.8Ω, 10V, 4V

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Documentation:

FQU1N60CTU Datasheet (9 Pages)

Package Outline Dimension on7 Page 8 Page

Part Numbering System on2 Page

FQU1N60CTU Datasheet PDF (9 Pages)

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FQU1N60CTU Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

1.00 A

Case/Package

TO-251-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

2.8 Ω

Polarity

N-Channel

Power Dissipation

28 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

1.00 A

Rise Time

21 ns

Input Capacitance (Ciss)

170pF @25V(Vds)

Input Power (Max)

2.5 W

Fall Time

27 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2500 mW

View Datasheet >

FQU1N60CTU Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

6.6 mm

Size-Width

2.3 mm

Size-Height

6.1 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

FQU1N60CTU Environmental

FQU1N60CTU Export Classifications

FQU1N60CTU Documents

FQU1N60CTU Datasheet

Fairchild

9 Pages / 0.53 MByte

FQU1N60CTU Other Datasheet PDF

Fairchild

10 Pages / 0.53 MByte

FQU1N60CTU Notice File

Fairchild

4 Pages / 0.5 MByte

FQU1N60 Documents

FQU1N60 Datasheet PDF

Fairchild

600V N-Channel MOSFET

FQU1N60CTU Datasheet PDF

ON Semiconductor

MOSFET N-CH 600V 1A IPAK

FQU1N60CTU Datasheet PDF

Fairchild

FAIRCHILD SEMICONDUCTOR FQU1N60CTU Power MOSFET, N Channel, 1A, 600V, 2.8Ω, 10V, 4V

FQU1N60TU Datasheet PDF

Fairchild

MOSFET N-CH 600V 1A IPAK

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Trans MOSFET N-CH 600V 1A 3Pin(3+Tab) IPAK

FQU1N60TU Datasheet PDF

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MOSFET N-CH 600V 1A IPAK

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