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Part Datasheet Search > IGBTs > Infineon > FS100R12KE3 Datasheet PDF
FS100R12KE3
$ 115.202
FS100R12KE3 Datasheet PDF (8 Pages)
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FS100R12KE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
35 Pin
Case/Package
ECONO3-4
Power Rating
480 W
Power Dissipation
480 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
7.1nF @25V
Input Power (Max)
480 W
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
480000 mW

FS100R12KE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Box
Size-Length
122 mm
Size-Width
62 mm
Size-Height
17 mm
Operating Temperature
-40℃ ~ 125℃

FS100R12KE3 Documents

Infineon
8 Pages / 0.43 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
1 Pages / 0.01 MByte
Infineon
33 Pages / 2.24 MByte

FS100R12 Documents

Infineon
INFINEON FS100R12PT4 IGBT Array & Module Transistor, N Channel, 100A, 1.2kV, 500W, 1.2kV, Module
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Trans IGBT Module N-CH 1200V 140A 480000mW 35Pin ECONO3-4 Tray
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Trans IGBT Module N-CH 1200V 100A 515000mW 35Pin ECONO 3 Tray
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Trans IGBT Module N-CH 1200V 140A 480000mW 42Pin ECONO3-4 Tray
Infineon
Trans IGBT Module N-CH 1200V 100A 515000mW 35Pin Tray
Infineon
Trans IGBT Module N-CH 1.2kV 130A 19Pin ECONO3-1
Infineon
Trans IGBT Module N-CH 1.2kV 100A 35Pin ECONO 3
Infineon
Trans IGBT Module N-CH 1200V 140A 480000mW 36Pin ECONO3-4 Tray
Infineon
Trans IGBT Module N-CH 1.2kV 100A 27Pin ECONO2-6
Infineon
Igbt, Module, n-Ch, 1.2kV, 100A
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