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Part Datasheet Search > IGBTs > Infineon > FS25R12W1T4BOMA1 Datasheet PDF
FS25R12W1T4BOMA1
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FS25R12W1T4BOMA1 Datasheet PDF (9 Pages)
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FS25R12W1T4BOMA1 Specifications

TYPE
DESCRIPTION
Number of Pins
18 Pin
Case/Package
AG-EASY1B-1
Power Dissipation
205 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
1.45nF @25V
Input Power (Max)
205 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
205000 mW

FS25R12W1T4BOMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 150℃ (TJ)

FS25R12W1T4BOMA1 Documents

Infineon
9 Pages / 0.76 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
1 Pages / 0.03 MByte
Infineon
33 Pages / 2.24 MByte
Infineon
1 Pages / 0.13 MByte

FS25R12W1T4 Documents

Infineon
Trans IGBT Module N-CH 1200V 45A 205000mW 18Pin EASY1B Tray
Infineon
Trans IGBT Module N-CH 1200V 45A 205000mW 18Pin Tray
Infineon
Trans IGBT Module N-CH 1.2kV 45A 18Pin
Infineon
Trans IGBT Module N-CH 1200V 45A 205000mW 18Pin Tray
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