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Part Datasheet Search > IGBTs > Infineon > FS35R12W1T4 Datasheet PDF
FS35R12W1T4
$ 31.563
FS35R12W1T4 Datasheet PDF (9 Pages)
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FS35R12W1T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
18 Pin
Case/Package
AG-EASY1B-1
Polarity
N-Channel
Power Dissipation
225 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
2nF @25V
Input Power (Max)
225 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
225 W

FS35R12W1T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
62.8 mm
Size-Width
33.8 mm
Size-Height
12 mm
Operating Temperature
-40℃ ~ 150℃

FS35R12W1T4 Documents

Infineon
9 Pages / 0.42 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte

FS35R12W1 Documents

Infineon
IGBT Array & Module Transistor, N Channel, 35A, 1.85V, 225W, 1.2kV, Module
Infineon
Trans IGBT Module N-CH 1200V 65A 225000mW 18Pin EASY1B-1 Tray
Infineon
Trans IGBT Module N-CH 1.2kV 65A 18Pin EASY1B-2
Infineon
Trans IGBT Module N-CH 1.2kV 65A 21Pin AG-EASY1B-2 Tray
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