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Part Datasheet Search > IGBTs > Infineon > FS75R12KE3BOSA1 Datasheet PDF
FS75R12KE3BOSA1
$ 142.332
FS75R12KE3BOSA1 Datasheet PDF (9 Pages)
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FS75R12KE3BOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
28 Pin
Case/Package
AG-ECONO2-6
Power Dissipation
20 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
5.3nF @25V
Input Power (Max)
350 W
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
350000 mW

FS75R12KE3BOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
107.5 mm
Size-Width
45 mm
Size-Height
17 mm
Operating Temperature
150℃ (TJ)

FS75R12KE3BOSA1 Documents

Infineon
9 Pages / 0.18 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
7 Pages / 0.13 MByte
Infineon
1 Pages / 0.13 MByte

FS75R12KE3 Documents

Infineon
Trans IGBT Module N-CH 1200V 105A 350000mW 28Pin ECONO 2 Tray
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IGBT Modules 1200V 75A 3-PHASE.
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Trans IGBT Module N-CH 1200V 105A 350000mW 28Pin ECONO2-6 Tray
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Trans IGBT Module N-CH 1200V 105A 355000mW 35Pin EconoPACK 3B Tray
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Trans IGBT Module N-CH 1200V 105A 355000mW 35Pin Tray
Infineon
Trans IGBT Module N-CH 1.2kV 105A 26Pin
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FS75R12KE3G power transistor module
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Trans IGBT Module N-CH 1200V 105A 355000mW 26Pin ECONO2-6 Tray
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Igbt Fs75r12ke3b3nosa1
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