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Part Datasheet Search > IGBTs > Toshiba > GT30J121(Q) Datasheet PDF
GT30J121(Q)
$ 4.052
GT30J121(Q) Datasheet PDF (6 Pages)
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GT30J121(Q) Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Power Dissipation
170000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
170 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
170000 mW

GT30J121(Q) Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

GT30J121(Q) Documents

Toshiba
6 Pages / 0.17 MByte
Toshiba
9 Pages / 0.22 MByte
Toshiba
27 Pages / 0.37 MByte

GT30J121 Documents

Toshiba
Trans IGBT Chip N-CH 600V 30A 3Pin(3+Tab) TO-3PN
Toshiba
Trans IGBT Chip N-CH 600V 30A 170000mW 3Pin(3+Tab) TO-3PN Sack
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