GT50J325 Datasheet PDF - Toshiba

●The GT50J325 from Toshiba is a N channel silicon insulated gate bipolar transistor in through hole TO-3P package. IGBT typically used at fast switching and high power switching applications.

● Fourth generation IGBT

● Enhancement mode type

● Fast switching

● Operating frequency up to 50KHz

● Maximum collector emitter saturation voltage of 2.45V

● FRD included between emitter and collector

● Collector emitter voltage VCES of 600V

● DC collector current of 50A

● Junction temperature of 150°C

● Collector power dissipation of 240W