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GT50JR22(STA1,E,S) Datasheet PDF - Toshiba

Manufacturer:

Toshiba

Category:

IGBTs

Case Package:

TO-3

Description:

Trans IGBT Chip N-CH 600V 50A 230000mW 3Pin(3+Tab) TO-3PN Magazine

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GT50JR22(STA1,E,S) Datasheet PDF (7 Pages)

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GT50JR22(STA1,E,S) Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3

Power Dissipation

230000 mW

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

230000 mW

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7 Pages / 0.19 MByte

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GT50JR22(STA1,E,S) Datasheet PDF

Toshiba

Trans IGBT Chip N-CH 600V 50A 230000mW 3Pin(3+Tab) TO-3PN Magazine

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