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GT60N321(Q) Datasheet PDF - Toshiba

Manufacturer:

Toshiba

Category:

IGBTs

Case Package:

TO-3

Description:

IGBT 1000V 60A 170W TO3P LH

Pictures:

3D Model

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Product Pictures

Documentation:

GT60N321(Q) Datasheet (6 Pages)

GT60N321(Q) Datasheet PDF (6 Pages)

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GT60N321(Q) Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3

Power Rating

170 W

Breakdown Voltage (Collector to Emitter)

1000 V

Reverse recovery time

2.5 µs

Input Power (Max)

170 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

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GT60N321(Q) Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Operating Temperature

150℃ (TJ)

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GT60N321(Q) Environmental

GT60N321(Q) Function Overview

GT60N321(Q) Documents

GT60N321(Q) Datasheet

Toshiba

6 Pages / 0.2 MByte

GT60N321(Q) Other Datasheet PDF

Toshiba

6 Pages / 0.18 MByte

GT60N321 Documents

GT60N321 Datasheet PDF

Toshiba

IGBT 1000V 60A 170W TO3P LH

GT60N321(Q) Datasheet PDF

Toshiba

IGBT 1000V 60A 170W TO3P LH

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