H11F3M Datasheet PDF - ON Semiconductor

●The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

●Features

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● As a remote variable resistor:

● ≤ 100Ω to ≥ 300MΩ

● ≤ 15pF shunt capacitance

● ≥ 100GΩ I/O isolation resistanceAs an analog switch:

● Extremely low offset voltage

● 60 Vpk-pk signal capability

● No charge injection or latch-up

● UL recognized (File #E90700)