H11G1TVM Datasheet PDF - ON Semiconductor

●The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

●Features

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● High BVCEO:

● 100 V Minimum for H11G1M

● 80 V Minimum for H11G2M

● High Sensitivity to Low Input Current (Minimum 500% CTR at IF= 1 mA)

● Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80°C)

● Safety and Regulatory Approvals:

● UL1577, 4,170 VACRMS for 1 Minute

● DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage