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HGTG10N120BND Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(3+Tab) TO-247 Rail

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

HGTG10N120BND Datasheet (8 Pages)

Part Numbering System on1 Page

HGTG10N120BND Datasheet PDF (8 Pages)

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HGTG10N120BND Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

1.20 kV

Current Rating

35.0 A

Case/Package

TO-247-3

Power Rating

298 W

Power Dissipation

298 W

Rise Time

165 ns

Breakdown Voltage (Collector to Emitter)

1200 V

Reverse recovery time

70 ns

Input Power (Max)

298 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

298000 mW

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HGTG10N120BND Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Size-Width

4.82 mm

Size-Height

20.82 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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HGTG10N120BND Environmental

HGTG10N120BND Export Classifications

HGTG10N120BND Documents

HGTG10N120BND Datasheet

Fairchild

8 Pages / 0.1 MByte

HGTG10N120BND Other Datasheet PDF

Fairchild

8 Pages / 0.1 MByte

HGTG10N120BND Drawing Diagrams

Fairchild

1 Pages / 0.03 MByte

HGTG10N120BND Notice File

Fairchild

6 Pages / 0.51 MByte

HGTG10N120BND Other References

Fairchild

1 Pages / 0.15 MByte

HGTG10N120 Documents

HGTG10N120BND Datasheet PDF

Fairchild

Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(3+Tab) TO-247 Rail

HGTG10N120BND Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(3+Tab) TO-247 Tube

HGTG10N120BND Datasheet PDF

Intersil

35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG10N120BN Datasheet PDF

Fairchild

IGBT 1200V 35A 298W TO247

HGTG10N120BND_Q Datasheet PDF

Fairchild

IGBT Transistors 35A 1200V N-Ch

HGTG10N120BND Datasheet PDF

Harris

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247

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