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Part Datasheet Search > IGBTs > Fairchild > HGTG11N120CN Datasheet PDF
HGTG11N120CN
$ 2.04
HGTG11N120CN Datasheet PDF (7 Pages)
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HGTG11N120CN Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.20 kV
Current Rating
43.0 A
Case/Package
TO-247-3
Power Dissipation
298 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
298 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
298000 mW

HGTG11N120CN Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
15.87 mm
Size-Width
4.82 mm
Size-Height
20.82 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

HGTG11N120CN Documents

Fairchild
7 Pages / 0.13 MByte
Fairchild
4 Pages / 0.09 MByte

HGTG11N120 Documents

Fairchild
Trans IGBT Chip N-CH 1200V 43A 298000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 1200V 43A 298000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 1.2kV 43A 3Pin(3+Tab) TO-247 Rail
Intersil
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
ON Semiconductor
Trans IGBT Chip N-CH 1200V 43A 298000mW 3Pin(3+Tab) TO-247 Rail
Harris
Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247
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