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HGTG11N120CN Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 1200V 43A 298000mW 3Pin(3+Tab) TO-247 Rail

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HGTG11N120CN Datasheet PDF (4 Pages)

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HGTG11N120CN Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Power Dissipation

298000 mW

Breakdown Voltage (Collector to Emitter)

1200 V

Input Power (Max)

298 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

298000 mW

HGTG11N120CN Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Rail

Operating Temperature

-55℃ ~ 150℃ (TJ)

HGTG11N120CN Environmental

HGTG11N120CN Export Classifications

HGTG11N120CN Function Overview

HGTG11N120CN Documents

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4 Pages / 0.09 MByte

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HGTG11N120CN Datasheet PDF

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