HGTG12N60C3D Datasheet PDF - Fairchild

●The HGTG12N60C3D is a N-channel IGBT with anti-parallel hyperfast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately 25 and 150°C. The IBGT used is the development type TA49123. The diode in anti-parallel with the IGBT is the development type TA49061. It is ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

● Short-circuit rating

● 210ns Fall time @ TJ = 150°C

● 104W Total power dissipation @ TC = 25°C