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Part Datasheet Search > IGBTs > Fairchild > HGTG18N120BN Datasheet PDF
HGTG18N120BN
$ 6.32

HGTG18N120BN Datasheet PDF - Fairchild

Manufacturer:
Fairchild
Category:
IGBTs
Case Package:
TO-247-3
Description:
Trans IGBT Chip N-CH 1.2kV 54A 3Pin(3+Tab) TO-247 Rail
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
HGTG18N120BN Datasheet (8 Pages)
Part Numbering System on1 Page
HGTG18N120BN Datasheet PDF (8 Pages)
View Datasheet
Click page to view the detail

HGTG18N120BN Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.20 kV
Current Rating
54.0 A
Case/Package
TO-247-3
Power Rating
390 W
Power Dissipation
390 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
390 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
390000 mW
View Datasheet >

HGTG18N120BN Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
15.87 mm
Size-Width
4.82 mm
Size-Height
20.82 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

HGTG18N120BN Documents

HGTG18N120BN Datasheet
Fairchild
8 Pages / 0.11 MByte
HGTG18N120BN Other Datasheet PDF
Fairchild
9 Pages / 0.24 MByte

HGTG18N120 Documents

HGTG18N120BND Datasheet PDF
Fairchild
Trans IGBT Chip N-CH 1200V 54A 390000mW 3Pin(3+Tab) TO-247 Rail
HGTG18N120BN Datasheet PDF
Fairchild
Trans IGBT Chip N-CH 1.2kV 54A 3Pin(3+Tab) TO-247 Rail
HGTG18N120BND Datasheet PDF
ON Semiconductor
Trans IGBT Chip N-CH 1200V 54A 390000mW 3Pin(3+Tab) TO-247 Tube
HGTG18N120BND Datasheet PDF
Intersil
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BN Datasheet PDF
ON Semiconductor
Trans IGBT Chip N-CH 1200V 54A 390000mW 3Pin(3+Tab) TO-247 Tube
HGTG18N120BND_07 Datasheet PDF
Fairchild
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BND_Q Datasheet PDF
Fairchild
Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail
HGTG18N120BND Datasheet PDF
Harris
Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, TO-247
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