HGTG30N60B3 Datasheet PDF - Fairchild

●The HGTG30N60B3 is a PT IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.

● Short-circuit rating

● 1.45V @ IC = 30A Low saturation voltage

● 90ns Fall time @ TJ = 150°C

● 208W Total power dissipation @ TC = 25°C