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Part Datasheet Search > IGBTs > Fairchild > HGTP10N120BN Datasheet PDF
HGTP10N120BN
$ 1.325
HGTP10N120BN Datasheet PDF (8 Pages)
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HGTP10N120BN Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.20 kV
Current Rating
35.0 A
Case/Package
TO-220-3
Power Dissipation
298000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
298 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
298000 mW

HGTP10N120BN Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Height
9.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

HGTP10N120BN Documents

Fairchild
8 Pages / 0.19 MByte
Fairchild
8 Pages / 0.19 MByte
Fairchild
1 Pages / 0.09 MByte

HGTP10N120 Documents

Fairchild
Trans IGBT Chip N-CH 1.2kV 35A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 1200V 35A 298000mW 3Pin(3+Tab) TO-220AB Tube
Intersil
35A, 1200V, NPT Series N-Channel IGBT
Harris
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
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