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Part Datasheet Search > IGBTs > Fairchild > HGTP5N120BND Datasheet PDF
HGTP5N120BND
$ 1.274
HGTP5N120BND Datasheet PDF (8 Pages)
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HGTP5N120BND Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.20 kV
Current Rating
21.0 A
Case/Package
TO-220-3
Power Dissipation
167000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
65 ns
Input Power (Max)
167 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
167000 mW

HGTP5N120BND Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Height
9.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

HGTP5N120BND Documents

Fairchild
8 Pages / 0.19 MByte
Fairchild
10 Pages / 0.28 MByte
Fairchild
1 Pages / 0.09 MByte

HGTP5N120 Documents

Fairchild
Trans IGBT Chip N-CH 1200V 21A 167000mW 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 1200V 21A 167000mW 3Pin(3+Tab) TO-220AB Tube
Intersil
IGBT 1200V 21A 167W TO220AB
Intersil
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
Harris
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
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