HIP2100IBZ Datasheet PDF - Renesas Electronics

●The HIP2100IBZ is a 100V high frequency half bridge N-channel power MOSFET Driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under-voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under-voltage of the high-side supply.

● Drives N-channel MOSFET half bridge

● Bootstrap supply maximum voltage to 114VDC

● On-chip 1R bootstrap diode

● Fast propagation times for multi-MHz circuits

● Drives 1000pF load with rise and fall times typical 10ns

● CMOS input thresholds for improved noise immunity

● Independent inputs for non-half bridge topologies

● No start-up problems

● Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt

● Low power consumption

● Wide supply range

● Supply under-voltage protection

● 3R Driver output resistance

● Near chip scale package footprint, which improves PCB efficiency and has a thinner profile