HMC327MS8GE Datasheet PDF - ADI

●Product Details

●The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.

●Applications

● Wireless Local Loop

●### Features and Benefits

● Gain: 21 dB

● Saturated Power: +30 dBm

● 45% PAE

● Supply Voltage: +5V

● Power Down Capability

● Low External Part Count