HMC406MS8GE Datasheet PDF - ADI

●Product Details

●The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage. Vpd can be used for full power down or RF output power/current control.

●Applications

● UNII

● HiperLAN & 802.11a WLAN

●### Features and Benefits

● Gain: 17 dB

● Saturated Power: +29 dBm

● 38% PAE

● Supply Voltage: +5V

● Power Down Capability

● Low External Part Count