HMC606-DIE Datasheet PDF - ADI

●Product Details

●The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers.

●The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils).

●Applications

● Radar, EW & ECM

● Microwave Radio

● Test Instrumentation

● Military & Space

● Fiber Optic Systems

●### Features and Benefits

● Ultra Low Phase Noise:

●-160 dBc/Hz @ 10 kHz

● P1dB Output Power: +15 dBm

● Gain: 14 dB

● Output IP3: +27 dBm

● Supply Voltage: +5V @64 mA

● 50 Ohm Matched Input/Output

● Die Size: 2.80 x 1.73 x 0.1 mm