HMC632LP5E Datasheet PDF - ADI

●Product Details

●The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.

●Applications

● Dual Output: Fo = 14.25 - 15.65 GHz

●Fo/2 = 7.125 - 7.825 GHz

● Pout: +9 dBm

● Phase Noise: -107 dBc/Hz @ 100 kHz Typ.

● No External Resonator Needed

● QFN Leadless SMT Package, 25 mm²

●### Features and Benefits

● Point to Point/Multipoint Radio

● Test Equipment & Industrial Controls

● SATCOM

● Military End-Use