●Product Details
●The HMC788A is a 0.01 GHz to 10 GHz, gain block, monolithic microwave integrated circuit (MMIC) amplifier using gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) technology.
●This 2 mm × 2 mm LFCSP amplifier can be used as either a cascadable 50 Ω gain stage, or to drive the local oscillator (LO) port of many of the single and double balanced mixers from Analog Devices, Inc. with up to 20 dBm output power.
●The HMC788A offers 14 dB of gain and an output IP3 of 33 dBm while requiring only 76 mA from a 5 V supply. The Darlington feedback pair exhibits reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.
●Applications
● Cellular, 3G, LTE, WiMAX, and 4G
● LO driver applications
● Microwave radio
● Test and measurement equipment
● Ultra wideband (UWB) communications
●### Features and Benefits
● Gain: 14 dB typical
● Operational frequency range: 0.01 GHz to 10 GHz
● Input/output internally matched to 50 Ω
● High input linearity
● 1 dB compression (P1dB): 20 dBm typical
● Output third-order intercept (IP3): 33 dBm typical
● Supply voltage: 5 V typical
● 2 mm × 2 mm, 6-lead lead frame chip scale package
●HMC788A-EP supports defense and aerospace applications (AQEC standard)
● Download the HMC788A-EP data sheet (pdf)
● Extended industrial temperature range: −55°C to +105°C
● Controlled manufacturing baseline
● One assembly/test site
● One fabrication site
● Enhanced product change notification
● Qualification data available on request
Part 3D Model
