HMC788ALP2ETR Datasheet PDF - ADI

●Product Details

●The HMC788A is a 0.01 GHz to 10 GHz, gain block, monolithic microwave integrated circuit (MMIC) amplifier using gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) technology.

●This 2 mm × 2 mm LFCSP amplifier can be used as either a cascadable 50 Ω gain stage, or to drive the local oscillator (LO) port of many of the single and double balanced mixers from Analog Devices, Inc. with up to 20 dBm output power.

●The HMC788A offers 14 dB of gain and an output IP3 of 33 dBm while requiring only 76 mA from a 5 V supply. The Darlington feedback pair exhibits reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.

●Applications

● Cellular, 3G, LTE, WiMAX, and 4G

● LO driver applications

● Microwave radio

● Test and measurement equipment

● Ultra wideband (UWB) communications

●### Features and Benefits

● Gain: 14 dB typical

● Operational frequency range: 0.01 GHz to 10 GHz

● Input/output internally matched to 50 Ω

● High input linearity

● 1 dB compression (P1dB): 20 dBm typical

● Output third-order intercept (IP3): 33 dBm typical

● Supply voltage: 5 V typical

● 2 mm × 2 mm, 6-lead lead frame chip scale package

●HMC788A-EP supports defense and aerospace applications (AQEC standard)

● Download the HMC788A-EP data sheet (pdf)

● Extended industrial temperature range: −55°C to +105°C

● Controlled manufacturing baseline

● One assembly/test site

● One fabrication site

● Enhanced product change notification

● Qualification data available on request