●Product Details
●The HMC8038 is a high isolation, nonreflective, 0.1 GHz to 6.0 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for cellular infrastructure applications, yielding up to 62 dB of isolation up to 4.0 GHz, a low 0.8 dB of insertion loss up to 4.0 GHz, and 60 dBm of input third-order intercept. Power handling is excellent up to 6.0 GHz, and it offers an input power for an 0.1 dB compression point (P0.1dB) of 35 dBm (VDD = 5 V). On-chip circuitry operates a single, positive supply voltage from 3.3 V to 5 V, as well as a single, positive voltage control from 0 V to 1.8 V/3.3 V/5.0 V at very low dc currents. An enable input (EN) set to logic high places the switch in an all off state, in which RFC is reflective.
●The HMC8038 has ESD protection on all device pins, including the RF interface, and can stand 4 kV HMB and 1.25 kV CDM. The HMC8038 offers very fast switching and RF settling times of 150 ns and 170 ns, respectively. The device comes in a RoHS-compliant, compact 4 mm × 4 mm LFCSP package.
●Applications
● Cellular/4G infrastructure
● Wireless infrastructure
● Automotive telematics
● Mobile radios
● Test equipment
●### Features and Benefits
● Nonreflective, 50 Ω design
● High isolation: 60 dB typical
● Low insertion loss: 0.8 dB typical
● High power handling
●34 dBm through path
●29 dBm terminated path
● High linearity
●0.1 dB compression (P0.1dB): 35 dBm typical
●Input third-order intercept (IP3): 60 dBm typical
● ESD ratings
●4 kV human body model (HBM), Class 3A
●1.25 kV charged device model (CDM)
● Single positive supply
●3.3 V to 5 V
●1.8 V-compatible control
● see data sheet for additional features
Part 3D Model
