HMC8410LP2FETR Datasheet PDF - ADI

●Product Details

●The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.

●The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 Ω, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.

●The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, LFCSP package.

●Multifunction pin names may be referenced by their relevant function only.

●Applications

● Software defined radios

● Electronics warfare

● Radar applications

●### Features and Benefits

● Low noise figure: 1.1 dB typical

● High gain: 19.5 dB typical

● High output third-order intercept (IP3): 33 dBm typical

● 6-lead, 2 mm × 2 mm LFCSP package