HMC903LP3ETR Datasheet PDF - ADI

●Product Details

●The HMC903LP3E is a self biased, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic (pHEMT), low noise amplifier (LNA) with an option bias control for IDQ reduction. It is housed in a 16-lead, 3 mm × 3 mm, LFCSP package. The HMC903LP3E amplifier operates from 6 GHz to 17 GHz, providing 18.5 dB of small signal gain and 1.7 dB noise figure in the 6 GHz to 16 GHz band, and an output IP3 of 25 dBm full band 6 GHz to 17 GHz, while requiring only 80 mA from a 3.5 V supply.

●The P1dB output power of 14.5 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q or image reject mixers. The HMC903LP3E also features an input and an output that are dc blocked and internally matched to 50 Ω, making it ideal for high capacity microwave radios and video satellite (VSAT) applications.

●Applications

● Point to point radios

● Point to multipoint radios

● Military and space

● Test instrumentation

●### Features and Benefits

● Low noise figure: 1.7 dB typical at 6 GHz to 16 GHz

● High gain: 18.5 dB typical at 6 GHz to 16 GHz

● Output power for 1 dB compression (P1dB):

●14.5 dBm typical at 6 GHz to 16 GHz

● Single-supply voltage: 3.5 V at 80 mA typical

● Output third-order intercept (IP3): 25 dBm typical

● 50 Ω matched input/output

● Self biased with optional bias control for IDQ reduction

● 16-lead, 3 mm × 3 mm, LFCSP package