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HN1B04FE
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HN1B04FE Specifications

TYPE
DESCRIPTION
Case/Package
ES
Polarity
NPN+PNP
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
0.15A

HN1B04FE Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active

HN1B04FE Documents

Toshiba
6 Pages / 0.31 MByte
Toshiba
6 Pages / 0.31 MByte

HN1B04 Documents

Toshiba
US NPN+PNP 50V 0.15A
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NPN+PNP 50V 0.15A
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US NPN+PNP 50V 0.15A
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Trans GP BJT NPN/PNP 30V 0.5A 6Pin SM
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US NPN+PNP 50V 0.15A
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TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal
Toshiba
US NPN+PNP 50V 0.15A
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