HN4B04J Datasheet PDF - Toshiba

●Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Q1: • Excellent hFE linearity : hFE(2) =25 (Min.) at VCE = −6V IC = −400mA Q2: • Excellent hFE linearity : hFE(2) =25 (Min.) at VCE = 6V IC = 400mA • Excellent hFE Linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier Applications