HN4B101J Datasheet PDF - Toshiba

●Features • TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) • Small footprint due to a small and thin package • High DC current gain : hFE = 200 to 500 (IC = −0.12 A) • Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max): NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 45 ns (typ.): NPN tf= 50 ns (typ.) • MOS Gate Drive Applications ，Switching Applications