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Part Datasheet Search > MOSFETs > ON Semiconductor > HUF75639S3ST Datasheet PDF
HUF75639S3ST
$ 1.4
HUF75639S3ST Datasheet PDF (12 Pages)
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HUF75639S3ST Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-263-3
Drain to Source Voltage (Vds)
100 V
Rise Time
60 ns
Input Capacitance (Ciss)
2000pF @25V(Vds)
Input Power (Max)
200 W
Fall Time
25 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

HUF75639S3ST Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon

HUF75639S3ST Documents

ON Semiconductor
12 Pages / 0.79 MByte
ON Semiconductor
12 Pages / 0.79 MByte
ON Semiconductor
1 Pages / 0.07 MByte

HUF75639S3 Documents

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MOSFET N-CH 100V 56A TO-262AA
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Power Field-Effect Transistor, 53A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Intersil
56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Fairchild
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL
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Trans MOSFET N-CH 100V 56A 3Pin (2+Tab) TO-263AB Rail
ON Semiconductor
Trans MOSFET N-CH 100V 56A 3Pin(2+Tab) D2PAK T/R
Intersil
56A, 100V, 0.025Ω, N-Channel UltraFET Power MOSFETs
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N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
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56A, 115V, 0.025Ω, N-Channel UltraFET Power MOSFET
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