IDW20G65C5 Datasheet PDF - Infineon

●The IDW20G65C5 is a SiC Schottky Diode features higher safety margin against overvoltage and complements CoolMOS™ offer, reduced EMI compared to snappier Silicon diode reverse recovery waveform. The 5th generation thinQ!™ compact Schottky diode with thin-wafer technology and it is improves efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ generation 5 has been designed to complement 650V CoolMOS™ families, this ensures meeting the most stringent application requirements in this voltage range.

● Revolutionary semiconductor material-silicon carbide

● Reduced cooling requirements

● No reverse recovery/no forward recovery

● Temperature independent switching behaviour

● High surge current capability

● Increased efficiency compared to silicon diode alternatives

● Enabling higher frequency/increased power density solutions

● Higher system reliability due to lower operating temperatures

● Reduced EMI

● Reduced risks of thermal runaway