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Part Datasheet Search > IGBTs > Infineon > IGB03N120H2 Datasheet PDF
IGB03N120H2
$ 3.2
IGB03N120H2 Datasheet PDF (12 Pages)
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IGB03N120H2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Power Dissipation
62.5 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
62.5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃

IGB03N120H2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.25 mm
Size-Width
9.9 mm
Size-Height
4.4 mm
Operating Temperature
-40℃ ~ 150℃

IGB03N120H2 Documents

Infineon
12 Pages / 1.12 MByte
Infineon
18 Pages / 0.77 MByte

IGB03N120 Documents

Infineon
INFINEON IGB03N120H2 IGBT Single Transistor, 3A, 2.8V, 62.5W, 1.2kV, TO-263, 3Pins
Infineon
INFINEON IGB03N120H2ATMA1 IGBT Single Transistor, 3A, 2.8V, 62.5W, 1.2kV, TO-263, 3Pins
Infineon
Trans IGBT Chip N-CH 1.2kV 9.6A 3Pin(2+Tab) TO-263
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1200V HighSpeed2 And 600V Highspeed Igbt For Switching Frequency From 30kHz Upwards. Focus Applications: Lamp Ballast, Power Supplies For Industry & Consumer Applications
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