IGB15N60T Datasheet PDF - Infineon

●Summary of Features:

● Lowest V ce(sat) drop for lower conduction losses

● Low switching losses

● Easy parallel switching capability due to positive temperature coefficient in V ce(sat)

● Very soft, fast recovery anti-parallel Emitter Controlled Diode

● High ruggedness, temperature stable behavior

● Low EMI emissions

● Low gate charge

● Very tight parameter distribution

●Benefits:

● Highest efficiency – low conduction and switching losses

● Comprehensive portfolio in 600V and 1200V for flexibility of design

● High device reliability