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Part Datasheet Search > IGBTs > Infineon > IGB30N60T Datasheet PDF
IGB30N60T
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IGB30N60T Datasheet PDF (12 Pages)
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IGB30N60T Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
187 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
187 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
187000 mW

IGB30N60T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-40℃ ~ 175℃

IGB30N60T Documents

Infineon
12 Pages / 0.65 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IGB30N60 Documents

Infineon
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin
Infineon
Trans IGBT Chip N-CH 600V 60A 3Pin TO-263 T/R
Infineon
Trans IGBT Chip N-CH 600V 60A 3Pin(2+Tab) TO-263
Infineon
Trans IGBT Chip N-CH 600V 60A 3Pin(2+Tab) TO-263
Infineon
HIGH SPEED 600V, 30A IGBT
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