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Part Datasheet Search > IGBTs > Infineon > IGB50N60T Datasheet PDF
IGB50N60T
$ 3.147
IGB50N60T Datasheet PDF (12 Pages)
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IGB50N60T Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
333 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
333 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
333000 mW

IGB50N60T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.25 mm
Size-Width
9.9 mm
Size-Height
4.4 mm
Operating Temperature
-40℃ ~ 175℃

IGB50N60T Documents

Infineon
12 Pages / 0.62 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IGB50N60 Documents

Infineon
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin
Infineon
Trans IGBT Chip N-CH 600V 100A 3Pin(2+Tab) TO-263
Infineon
Trans IGBT Chip N-CH 600V 100A 3Pin(2+Tab) TO-263
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