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Part Datasheet Search > IGBTs > Infineon > IGW50N60H3 Datasheet PDF
IGW50N60H3
$ 7.392

IGW50N60H3 Datasheet PDF - Infineon

Manufacturer:
Infineon
Category:
IGBTs
Case Package:
TO-247-3
Description:
Trans IGBT Chip N-CH 600V 100A 333000mW 3Pin(3+Tab) TO-247 Tube
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
IGW50N60H3 Datasheet (14 Pages)IGW50N60H3 User Reference Manual Guide (270 Pages)IGW50N60H3 Application Note (48 Pages)
IGW50N60H3 Datasheet PDF (14 Pages)
View Datasheet
Click page to view the detail

IGW50N60H3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
333 W
Number of Positions
3 Position
Power Dissipation
333 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
333 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
333 W
View Datasheet >

IGW50N60H3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.1 mm
Operating Temperature
-40℃ ~ 175℃
View Datasheet >

IGW50N60H3 Documents

IGW50N60H3 Datasheet
Infineon
14 Pages / 1.52 MByte
IGW50N60H3 User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
IGW50N60H3 Other Datasheet PDF
Infineon
73 Pages / 2.93 MByte
IGW50N60H3 Application Note
Infineon
48 Pages / 2 MByte

IGW50N60 Documents

IGW50N60H3 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 100A 333000mW 3Pin(3+Tab) TO-247 Tube
IGW50N60T Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 100A 3Pin TO-247 Tube
IGW50N60TPXKSA1 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 90A 333000mW 3Pin(3+Tab) TO-247 Tube
IGW50N60H3FKSA1 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 100A 333000mW 3Pin(3+Tab) TO-247 Tube
IGW50N60TFKSA1 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 600V 90A 333000mW 3Pin(3+Tab) TO-247 Tube
IGW50N60TP Datasheet PDF
Infineon
The new 600V TRENCHSTOP™ Performance has been developed based on 600V TRENCHSTOP™ IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
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