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Part Datasheet Search > IGBTs > Infineon > IHW25N120R2 Datasheet PDF
IHW25N120R2
$ 1.192
IHW25N120R2 Datasheet PDF (12 Pages)
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IHW25N120R2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
365 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
365 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
365 W

IHW25N120R2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.3 mm
Size-Height
21.1 mm
Operating Temperature
-40℃ ~ 175℃

IHW25N120R2 Documents

Infineon
12 Pages / 0.39 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IHW25N120 Documents

Infineon
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3Pin
Infineon
Trans IGBT Chip N-CH 1200V 50A 365000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 1200V 50A 231000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 1200V 50A 231000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 1.2kV 50A 3Pin(3+Tab) TO-247
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