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Part Datasheet Search > IGBTs > Infineon > IKB15N60T Datasheet PDF
IKB15N60T
$ 1.971
IKB15N60T Datasheet PDF (14 Pages)
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IKB15N60T Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
130 W
Power Dissipation
130 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
34 ns
Input Power (Max)
130 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
40 ℃

IKB15N60T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.31 mm
Size-Width
9.45 mm
Size-Height
4.57 mm
Operating Temperature
-40℃ ~ 175℃

IKB15N60T Documents

Infineon
14 Pages / 0.79 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IKB15N60 Documents

Infineon
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin
Infineon
Trans IGBT Chip N-CH 600V 30A 3Pin(2+Tab) TO-263
Infineon
Trans IGBT Chip N-CH 600V 30A 3Pin(2+Tab) TO-263
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